A Low-Loss and High Isolation D-Band SPDT Switch Utilizing Deep-Saturated SiGe HBTs

A single-pole double-throw switch, utilizing double-shunt, deep-saturated HBTs is implemented in a 0.13 μm SiGe BiCMOS technology, occupying 0.36 mm
²
of IC area. A superior switch performance is identified when HBTs are operated in saturation regime, and state of the art performance is achieved at D-band frequencies from 96 to 163 GHz. Measurements show a minimum insertion loss of 2.6 dB at 120 and 150 GHz, a highest isolation of 29 dB at 120 GHz and an input 1 dB compression point of 17 dBm at 94 GHz, outperforming similar implementations in deep-scaled CMOS technologies.