Optoelectronic properties of silicon photodetector doped with indium or aluminum

In this research paper, the photoelectronic properties of laboratory fabricated silicon photodetector doped with indium or aluminum are measured and discussed. The effects of diffusion temperature, diffusion time, doping and reverse voltages on the photoelectronic properties are analyzed. It was found that the PN devices exhibit very good rectification properties at 1050 °C diffusion temperature and 30 minutes diffusion time. I-V characteristic curves showed that samples doped with 150 nm indium and 200 nm of aluminum exhibit better electronic properties of low leakage current with ideality factors equal to 1.7 and 1.87 respectively. Photogenerated current exhibits maximum value at 0.85 μm and it still has more than 35% of its maximum values at 1.1 μm wavelength. The correlation of the simulated and the experimentally measured results show that the profile of photogenerated current with the wavelength is almost identical in shape. Furthermore the position of the peak currents occurs nearly at the same wavelength.