Development of semiconductor switches (SiC-BGSIT) applied for DC circuit breakers

In this paper, we introduce silicon carbide (SiC) buried gate static induction transistors (BGSITs) which can be applied for circuit breakers in DC distribution systems. SiC-BGSITs have excellent electrical properties such as low on-resistance, first switching speed and robustness. These properties are indispensable for the realization of semiconductor circuit breakers in DC distribution systems and cannot be achieved by any other semiconductor materials.