High performance quantum well micro-hall device for current sensing in inverters

An InGaAs quantum well remotely-doped heterostructure grown by MBE was fabricated as a micro-Hall device and applied as a remote current sensor. Detailed studies of device sensitivities, signal linearity, and noise were performed over broad temperature and frequency ranges. Good performance was demonstrated up to 500 K with magnetic sensitivities as high as 1400 V/A/T at 80 K and 1000 V/A/T at 390 K. Detection limits at 100 kHz of 3 nT and 50 nT were measured for 80 K and 390 K, respectively. These studies suggest the need to develop magnetometers based on wide-band gap semiconductors for temperatures above 500 K.