Characterization of semi-insulating (SI) GaAs as photoconductive switch material for high power, UWB microwave applications

Summary form only given. A Photoconductive Semiconductor Switch (PCSS) based on SI GaAs material and used as a component of a pulse shaping network, has been studied using a 2-3 D semiconductor device and materials simulation code. Simulations include device characteristics at low and very high bias conditions, determination of hold-off voltage, role of traps in the transport mechanism, and the device response mechanism with changes in such parameters as carrier lifetime, trap captures cross-section, etc. Deviations from known characteristics of "lifetime" material were evident and, as expected, results did not display all known characteristics of "relaxation" materials.