Evolution of Electrical Performance in New Generation of SiC MOSFET for High Temperature Applications

This paper presents the evolution of electrical performance between the first and the second generation of SiC MOSFET for high temperature applications. A complete process to characterize the device at high temperature has been established and two generations of SiC MOSFET have been compared. The static characteristics and switching performances have been tested under varying temperature from 25 °C to 250 °C. The result allows us to conclude on the possibility to use SiC MOSFET devices in high temperature applications.