SiC-AlN structure based MEMS

To obtain a SiC-based MEMS, we proposed using the epitaxial SiC-AlN structure which offers the best possible compatibility (both in crystal microchemistry and in thermomechanics). Our experience in depositing either AlN or SiC films on to large-size foreign material substrates and selective etching (dry or wet) of SiC and AlN made it possible to form the gyroscopic structure based on a 4 micron-thick cellular SiC membrane with the spatial resolution as low as at least 3 micron.