Diamond field emitter array for high temperature microelectronics applications

A diamond field emitter array for high temperature microelectronics applications has been developed. Electron field emission characteristics of uniformly constructed micro-pyramids of polycrystalline diamond with varying sp/sup 2/ content have been systematically investigated. Concurrently, heat treatment was performed and emission characteristics of the post-treated tips were evaluated. The experimental results show that the field emission characteristics of the diamond can be improved by increasing the sp/sup 2/ content and performing heat treatment. The emission current is significantly enhanced and the turn-on electric field is drastically reduced. Furthermore, the electron field emission characteristics of the post heat-treated diamond tips are found to be temperature insensitive up to at least 250/spl deg/C. Thus, the diamond field emitter is a new electronic candidate for high temperature applications, superior to the silicon emitter which is temperature insensitive only up to 80/spl deg/C.