Single-Grain Si TFTs Fabricated From Sputtered Si on a Polyimide Substrate

Single-grain (SG) Si TFTs were fabricated from sputtered a-Si to achieve high performance TFTs on a polyimide substrate using a low temperature (350 °C) process including μ-Czochralski crystallization. The carrier mobility is 309 cm
²
/V·s and 126 cm
²
/V·s for electrons and holes, respectively. The devices are also successfully transferred to a flexible polyethylene naphyhalate (PEN) foil.