High-temperature operation of 1.3-/spl mu/m AlGaInAs/InP strained multiple quantum well lasers with an AlInAs electron stopper layer

Summary form only given. Recently, AlGaInAs-InP lasers have been demonstrated to show superior temperature characteristics as compared to conventional GaInAsP/InP lasers, which is due to a larger conduction band offset of the AlGaInAs-InP systems and the resultant decrease in the electron overflow out of the multiple quantum well (MQW) active layers. In this study, we investigated the effect of the electron stopper layer (ESL) and observed a considerable improvement in the characteristic temperatures of the threshold current and slope efficiency, especially at higher temperatures, resulting in a higher operation temperature in the lasers with the ESL.