730-nm emitting compressively strained InGaAsP quantum well cw diode lasers

Summary form only given. The use of an InGaAsP quantum well (QW) active region offers the intriguing possibility of realizing reliable high-power operation at short wavelengths (730 nm). We employ high bandgap cladding layers and confining layers to suppress carrier leakage along with a 1.5% compressively strained InGaAsP QW. The structure was grown on [100] substrates misoriented 10 toward (111) A by low-pressure metal-organic chemical-vapor deposition (LPMOCVD).