Resistive hysteresis of MOD-made BaTiO3 ferroelectric thin film dependent on film thickness

An MOD-made BaTiO
₃
(BT) thin film was prepared for investigating the relation between its ferroelectric properties and the behavior of resultant resistive hysteresis. For ferroelectric 110 nm-thickness BT film, its coercive field is observed to relate quantitatively to the characteristics of resistive hysteresis, where the current on/off ratio is obtained as 1-2 orders of magnitude. We consider that the ferroelectricity in the film makes a different type of behavior in resistive hysteresis and is effective for improving the behavior and characteristics.