Characterization of nitrogen-doped TiO2 thin films for photovoltaic applications

Nitrogen-doped TiO
₂
thin films were deposited by atomic layer deposition on glass substrates with various nitrogen concentrations for potential use in photovoltaic applications as a transparent p-type layer. Nitrogen doping was achieved by combining the use of titanium isopropoxide, N
₂
O and NH
₃
as precursors. All the films were deposited at 265 °C. The maximum nitrogen doping level achieved in this study was 4.5 at. % resulting in films exhibiting a resistivity of 116 Ω cm associated with an average transmittance of 65% in the visible-infrared range.