A novel integrated decoupling capacitor for MCM-L technology

This paper discusses the design, materials, fabrication, and measurements of a novel integrated decoupling capacitor for MCM-L-based substrates, Based on modeling using the Semiconductor Industry Association Roadmap, it has been estimated that 13-72 nF/cm/sup 2/ of specific decoupling capacitance will be required for the next decade, The capacitor in this paper addresses this need. The fabrication of the capacitor has been achieved using filled polymer materials in thin film form, with via diameters of 100 /spl mu/m and below, through photodefinable processes. Dielectric constant as high as 65 with loss tangent below 0.05 and specific capacitance of 22 nF/cm/sup 2/ have been achieved. The scattering parameters were measured up to 20 GHz using a network analyzer for various capacitor structures (varying geometry and dielectric thickness) to study input impedance and scaling of the devices.