3D vertical TaOx/TiO2 RRAM with over 103 self-rectifying ratio and sub-μA operating current

The 3D double-layer vertical RRAM with ultralow sub-μA operating current and high self-rectifying ratio over 10
³
has been demonstrated for the first time. This Ta/TaO
x
/TiO
2
/Ti interfacial switching device overcomes the intrinsic trade-off between operating current and variability in filamentary RRAMs and shows promising potential for high-density data storage.