Demonstration of zero-offset-field operation for top-pinned MTJ with synthetic antiferromagnetic free layer

We have designed and demonstrated a top-pinned magnetic tunnel junction (MTJ) with a synthetic antiferromagnetic (SAF) free layer, which eliminated the offset field. The key SAF structure was designed on the basis of a prediction derived from micromagnetic simulations. As a result, fabricated MTJ with an SAF free layer exhibited stable switching without applying an external field.