VLSI processed InGaAs on Si MOSFETs with thermally stable, self-aligned Ni-InGaAs contacts achieving: Enhanced drive current and pathway towards a unified contact module

Parasitic resistance (R
para
) is a grand challenge to successfully hetero-integrate III-V channels onto Si for CMOS application. Here, we report the first statistical I
Dsat
comparison for non-self-aligned and self-aligned contacts of In
0.53
Ga
0.47
As MOSFETs fabricated on large scale Si substrates with VLSI toolsets. We compare non-self-aligned Mo and self-aligned Ni-InGaAs contacts. Devices with self-aligned contacts exhibit a 25% enhancement in I
Dsat
over devices with non-self-aligned contacts largely due to the 27% reduction in R
para
. We have also extended the thermal stability of Ni-InGaAs to 500 °C (highest reported) enabling it to be compatible with BEOL processes. The impact of the Ni-InGaAs process module on tool contamination is discussed. These results represent significant progress towards establishing a path to a unified Ni-based S/D contact module for Si/SiGe/Ge/III-V co-integration on VLSI platforms.