High-power and high-linearity photodetector module based on a modified uni-traveling carrier photodiode

We report on packaged photodiode modules based on modified uni-traveling carrier photodiodes (MUTC-PDs). Modules with MUTC-PDs flip-chipped on Aluminum Nitride (AlN) and an active area diameter of 40 μm were developed. The module demonstrated a 3-dB bandwidth of up to 17 GHz. High saturated RF output power was achieved with 25 dBm output power at 10 GHz and 23.8 dBm at 15 GHz. Also, using a two tone experimental setup we measured the output 3
^rd
order intercept point (OIP3) at 10 GHz to be over 30 dBm. Additionally, modules with MUTC-PDs flip-chipped on a Diamond substrate and an active area of 20 μm were developed. The modules exhibited a 3-dB bandwidth up to 30 GHz and an RF output power of 17 dBm at 30 GHz. To the best of our knowledge, these are the highest RF power and OIP3 levels ever reported in this frequency range from a packaged photodiode.