Design of a Q-Band Eight-Way Lumped Power Divider in 90 nm CMOS Technology

A Q-band eight-way power divider in CMOS technology is presented. This divider is designed using lumped elements to realize a compact layout. Parametric analyses for the parasitic effects are given using simplified inductor/capacitor models. Measurement in the 37-49 GHz frequency range shows an insertion loss less than 2.7 dB, the input/output return loss better than -13.7 dB and the port-to-port isolation better than 22.5 dB (more than 30 dB over 44-49 GHz).