Ultrahigh voltage SiC bipolar devices

Ultrahigh voltage SiC bipolar devices more than 13 kV were developed, and their package technology was investigated. As a result, we have succeeded in creating a 13kV level PiN diode without forward voltage degradation by using 4° off substrates and a 15kV p-channel IGBT with a low differential specific on-resistance (R
diff,on
) at high temperature. Moreover, the results reveal that the nano-tech resin, improved resin and Si
3
N
4
DBC substrate are the best materials for package at high temperature and ultrahigh voltage.