CMOS sources and detectors for sub-millimeter wave applications

An integrated chain composed of an 195-GHz oscillator with frequency doubled output at ~390 GHz followed by two cascaded ÷2 injection locked frequency dividers with output frequency of ~49 GHz is demonstrated in 45-nm CMOS. The peak power radiated at ~390 GHz by an on-chip antenna is ~2 μW. This work indicates it is possible to phase-lock submillimeter wave signals in CMOS. Polysilicon Gate separated Schottky diodes that can be fabricated without any process modifications in a foundry 130-nm CMOS process are utilized to implement 280-GHz and 860-GHz detectors for imaging. A fully-integrated 280-GHz 4×4 imager array exhibits measured NEP of 29pW/Hz
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and responsivity of 5.1kV/W (323V/W without the amplifier). The 860-GHz detector without an amplifier achieves responsivity of 273V/W and NEP of 42pW/Hz
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.