Ultralow on-resistance 30–40 V UMOSFET by 2-D scaling of ion-implanted superjunction structure

We present an ultimately narrow pitch superjunction UMOSFET (SJ-UMOS) with a record low specific on-resistance (R
_sp
) for automotive applications. This high performance device was designed by not only shrinkage of lateral p/n pitch, but reduction of longitudinal dimension for voltage sustaining region including ion-implanted p-columns. The refined technologies brought us a fully depleted SJ structure with extremely scaled pitch to a minimum of 1.0 μm. In the developed SJ-UMOS, an ultralow R
_sp
(V
_GS
= 10 V) of 4.75 miimm
²
(2.95 miimm
²
without a substrate component) at a breakdown voltage of 32.8 V was obtained. We also confirmed excellent properties of low R
_on
Q
_G
FOM and soft recovery operation of a body diode due to the best architecture around the gate electrode of the MOSFET.