Research and implementation of 150W SiC internally match and power combiner at S band

As one of the third generation semiconductor materials, SiC has many advantages, such as high-power, high gate-drain breakdown voltage, heat stability and anti-radiation ability. So it is of high value for study and application prospect. This paper bases on 20mm SiC MESFET which is made by NEDI, through internally match circuit and power combiner technology, designs a power module. The power module output power has 150W with the gain is 9dB at S-band 2.8GHz under a pulse condition of 100us pulse width and 10% duty cycle.