4H-SiC Schottky contact improvement for temperature sensor applications

An improvement in performance of 4H-SiC Schottky diodes using a Ni metal is proposed. The effects of the Schottky and ohmic contacts' annealing process conditions are investigated through electrical characterization of the diodes. A thermal treatment at 800°C leads to devices with stable and reproducible electrical behavior. A high performance temperature sensor based on these 4H-SiC Schottky diode has been proved.