Body-Tied Germanium Tri-Gate Junctionless PMOSFET With In-Situ Boron Doped Channel

In this paper, we demonstrate body-tied Ge tri-gate junctionless (JL) p-channel MOSFETs directly on Si. Our tri-gate JL-PFET exhibits higher current than the conventional inversion-mode transistor through in-situ heavily doped technique and trimming down Ge fin width. We show that the JL-PFET with tri-gate structure has excellent I
_ON
/I
_OFF
ratio and good short channel effect control on the channel potential. The current ratio is of ~6×10
³
(ID) at V
_DS
=-0.1 V, V
_GS
=-3, and 0 V. The relatively low OFF-current is of 6 nA/ μm at V
_DS
=-0.1 V and V
_GS
=0 V. The subthreshold swing of 203 mV/decade and drain induced barrier lowering of 220 mV/V are reported at L
_G
=120 nm.