3D TCAD statistical analysis of transient charging in BTI degradation of nanoscale MOSFETs

We present a comprehensive 3D statistical simulation analysis of transient charging during BTI degradation in nanoscale MOSFETs. We study the impact of several variability sources affecting the trap capture time constants. Our simulation results identify the activation energy involved in the multi-phonon capture process as major parameter responsible for BTI time constants variability. Our findings highlight the importance of further multiscale investigation involving experimental characterization, mesoscopic TCAD modeling and microscopic ab-initio computations.