Enhanced light emission from Ge micro bridges uniaxially strained beyond 3%

We present a stressor-free fabrication approach for creating 3.1% uniaxial tensile strain in Ge layers resulting in a 25× increase in PL intensity. 460 cm
^-1
gain is predicted for aforementioned strain and 1×10
¹⁹
cm
^-3
n-doping.