Compact Modeling of Nanoscale Trapezoidal FinFETs

An analytical compact model for the drain current of undoped or lightly doped nanoscale FinFETs with trapezoidal cross section is proposed. The compact model of rectangular FinFETs is extended to trapezoidal FinFETs using equivalent nonplanar device parameters and corner effects. The model has been validated by comparing the results with those of 3-D numerical device simulations. The very good accuracy of the drain current and transcapacitances makes the proposed model suitable for implementation in circuit simulation tools.