Numerical study on nanowire tunnel FET with dynamic threshold operation architecture

In this paper, a nanowire tunnel field-effect transistor with dynamic threshold operation architecture (DT-NTFET) is proposed and the numerical study on its characteristics is presented. It shows that, in DT operation, the DT-NTFET can choose the threshold voltage (V
T
) flexibly by changing the adjust gate voltage, thus it can be applied as a multifunctional device in the future circuit design; in common mode operation, its subthreshold swing (SS) gets steeper, and its drive current is enhanced with no loss of OFF-state current.