An analytical model for the electron velocity overshoot effects in strained-Si on Si/sub x/Ge/sub 1-x/ MOSFETs

We have quantitatively described the transconductance improvement that can be obtained in deep submicron strained-Si on Si/sub x/Ge/sub 1-x/ MOSFETs with respect to conventional Si ones due to velocity overshoot effects. We have done so making use of a Monte Carlo simulator and a recently developed transconductance analytical model.