A multicomb variance reduction scheme for Monte Carlo semiconductor simulators

We adapt a multicomb variance reduction technique used in neutral particle transport to Monte Carlo micro-electronic device modeling. We implement the method in a two-dimensional (2-D) MOSFET device simulator and demonstrate its effectiveness in the study of hot electron effects. Our simulations show that the statistical variance of hot electrons is significantly reduced with minimal computational cost. The method is efficient, versatile, and easy to implement in existing device simulators.