The impact of metal-1 plasma processing-induced hot carrier injection on the characteristics and reliability of n-MOSFETs

We report on plasma processing-induced damage to sub-half-micron n-MOSFETs that is invoked by potential differences between device terminals during metal-1 plasma processing. The damage mechanism is identified as hot carrier (HC) injection promoted by the layout of metal-1 interconnect. Using conventional and modified charge pumping techniques as well as transistor parameter measurements, we also investigate the impact of the damage on device reliability by applying Fowler-Nordheim (FN) and hot carrier stresses. The results show the severe impact of this damage on device reliability, which is attributed to trapping of positive charge at the drain edge that is enough to shorten the device channel.