High-Performance Pentacene Thin-Film Transistor With High- $\kappa$ HfLaON as Gate Dielectric

Pentacene organic thin-film transistor (OTFT) using high- k HfLaON gate dielectric is proposed, and the effects of varying its nitrogen content are studied. The HfLaON film is deposited using reactive sputtering of Hf-La target in Ar/O
₂
/N
₂
ambience with different N
₂
flow rates and then annealed in N
₂
. All the OTFTs can operate at low voltage with a threshold voltage as low as -0.53 V. The OTFT with an optimal nitrogen content can achieve a carrier mobility of 0.71 cm
²
/V·s, which is about twice that of its counterpart with HfLaO gate dielectric.