Development of sputtering technology of Ta2O5/TaOx stacked film for ReRAM mass-production

This paper deals with development of sputtering technology of Ta
₂
O
₅
/TaO
_x
stacked film for ReRAM mass-production. Thickness of TaO
_x
film deposited by sputtering process is possible to obtain with good uniformity. However, if a high deposition rate is required for mass production, it is very difficult to obtain good controllability and uniformity of TaO
_x
film. These problems affect the switching characteristics of the ReRAM. In order to solve these problems, sputtering tool and process for ReRAM mass-production are developed. We report the result of TaO
_x
film with good resistance uniformity and controllability and deposition stability without low deposition rate. Moreover, switching characteristics of Pt/Ta
₂
O
₅
/TaO
_x
/Pt-ReRAM-cells are evaluated.