Undoped epitaxial Si channel n-MOSFET grown by UHV-CVD with preheating

Undoped epitaxial channel n-MOSFET with high transconductance was developed. In order to obtain a good crystal quality of the epitaxial layer and, thus, to achieve high performance, it is important to reduce the oxygen concentration at the epitaxial Si/Si substrate interface. In this paper, we describe the relationship between the electrical characteristics and the surface density of oxygen at the epitaxial Si/Si substrate. We also describe the dependence of the electrical characteristics on epitaxial Si thickness. The g/sub m/ of n-MOSFET with 40-nm epitaxial Si for 0.10-/spl mu/m gate length was 630 mS/mm at V/sub d/-1.5 V, and the drain current was 0.77 mA//spl mu/m. This g/sub m/ value in the case of the epitaxial Si channel is about 20% larger than that of bulk the MOSFET. These results show that epitaxial Si channel MOSFET's are useful for future high-speed ULSI devices.