MIM Capacitors Based on ${\rm ZrTiO}_{\rm x}/{\rm BaZr}_{\rm y}{\rm Ti}_{\rm 1-y}{\rm O}_{3}$ Featuring Record-Low VCC and Excellent Reliability

Perovskite-based BaZryTi
_1-y
O
₃
(BZTO) (y=0.6) with partial crystallization has been found to possess a rather high- κ value of 48.6 and positive quadratic voltage coefficient of capacitance (VCC). Through stacking BZTO and ZrTiO
_x
as laminate dielectric, metal-insulator-metal capacitors using VCC canceling effect advance frontiers by exhibiting a record-low VCC of 14 ppm/V
²
at the capacitance of 13.4 fF/μm
²
, low dielectric loss tangent , and low leakage current of 7.5×10
^-9
A/cm
²
at -1 V. With constant voltage stress at 2.5 V for 1000 s, degradation in leakage current is observed. In addition, excellent reliability of 0.89% capacitance change against stress up to a projected of 10 years is also achieved. The aforementioned characteristics not only compare favorably to other high- κ-based dielectrics, most importantly, but also these results meet ITRS requirements set by 2024.