Total-dose and SEU characterization of 0.25 micron CMOS/SOI integrated circuit memory technologies

Total-dose and single-event-effect radiation characterization of 0.25 micron test macro SRAMs fabricated at IBM's East Fishkill research foundry in un-hardened bulk and un-hardened partially-depleted SOI silicon, are reported. The design and fabrication process were optimized for high-performance and short access time using supply voltages of 2.5 V for the 64 K-bit and 1.8 V for the 144 K and 288 K-bit test macro SRAMs.