850 nm Oxide-VCSEL With Low Relative Intensity Noise and 40 Gb/s Error Free Data Transmission | IEEE Journals & Magazine | IEEE Xplore

850 nm Oxide-VCSEL With Low Relative Intensity Noise and 40 Gb/s Error Free Data Transmission


Abstract:

We have designed and fabricated a high speed 850 nm oxide-confined vertical cavity surface emitting laser with an oxide aperture dimension of ~ 4 μm and a threshold curre...Show More

Abstract:

We have designed and fabricated a high speed 850 nm oxide-confined vertical cavity surface emitting laser with an oxide aperture dimension of ~ 4 μm and a threshold current ITH=0.53 mA at room temperature (20 °C). It demonstrates a modulation bandwidth of 21.2 GHz, and achieves a laser relative intensity noise reaching standard quantum limit 2hν/P0=-154.3 dB/Hz at high bias I/ITH=10. Furthermore, error-free data transmission at 40 Gb/s is obtained at I=6.5 mA which corresponds to an energy/data efficiency of 431 fJ/bit.
Published in: IEEE Photonics Technology Letters ( Volume: 26, Issue: 3, February 2014)
Page(s): 289 - 292
Date of Publication: 05 September 2013

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