Reliable wide-temperature-range operation of 1.3-/spl mu/m beam-expander integrated laser diode for passively aligned optical modules

A novel structure for a 1.3-/spl mu/m beam-expander integrated (BEX) laser diode is demonstrated. It combines a thickness-tapered InGaAsP-InP multiple quantum-well (QW) crystal grown by a novel silicon shadow masked metalorganic vapor phase epitaxy and a simple reverse-trapezoid-ridge waveguide laser structure that offers smooth mode field expansion and improved high-temperature lasing performance. We found this new BEX laser quite suitable for operation over a wide range of temperatures above 85/spl deg/C and highly efficient lens-free coupling to a single-mode fiber (SMF) of less than 3 dB. These excellent lasing properties along with reliability under severe environmental conditions make this BEX-LD a promising candidate for practical use for low-cost long-wavelength light-source modules using optical passive alignment techniques.