Elimination of Gate Leakage in GaN FETs by Placing Oxide Spacers on the Mesa Sidewalls

This letter reports the fabrication of a GaN heterostructure field-effect transistor with oxide spacer placed on the mesa sidewalls. The presence of an oxide spacer effectively eliminates the gate leakage current that occurs at the channel edge, where the gate metal is in contact with the 2-D electron gas edge on the mesa sidewall. From the two-terminal gate leakage current measurements, the leakage current was found to be several nA at V
_G
=-12 V and at V
_G
=-450 V. The benefits of the proposed spacer scheme include the patterning of the metal electrodes by plasma etching and a lower manufacturing cost.