Single- and dual-feedback transimpedance amplifiers implemented by SiGe HBT technology

Monolithically integrated SiGe/Si heterojunction bipolar transistor (HBT) transimpedance amplifiers, with single- and dual-feedback configurations, have been designed, fabricated, and characterized. The single-feedback amplifier showed transimpedance gain and bandwidth of 45.2 dB/spl Omega/ and 3.2 GHz, respectively. The dual-feedback version exhibits improved gain and bandwidth of 47.4 dB/spl Omega/ and 3.3 GHz, respectively. Their performance characteristics are excellent in terms of their application in communication systems.