Stability conditioning to enhance read stability 10x in 50nm AlxOy ReRAM

This study focuses on read stability after reset in 50nm Al
_x
O
_y
ReRAM. Unstable behaviors are characterized and a 2-part solution to reduce instability from 64 to 6% and read error from 8 to 0.2% is proposed. After conventional reset including verify, (i) a block-level low voltage sealing operation is followed by (ii) a stability check loop.