Consideration of conductive filament for realization of low-current and highly-reliable TaOx ReRAM

Characteristics and their origin of a conductive filament in TaO
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ReRAM are investigated. The results of systematic experimentation demonstrate that the formation of a small conductive filament with high density of oxygen vacancies, achieved by controlling the oxygen content of the resistance-switching material and forming/set current, is the key to achieving low-current switching combined with long retention.