Trapping and Thermal Effects Analysis for AlGaN/GaN HEMTs by Means of TCAD Simulations

The aim of this letter is to gain insights into the thermal effects and trapping phenomena of AlGaN/GaN high electron mobility transistors by means of 2-D numerical simulations. Starting from experimental pulsed measurements, we study not only the gate/drain lag due to trap phenomena, but also the thermal behavior of such transistors. Actually, transient tests are useful both to analyze the self-heating effect and to characterize donor surface traps and acceptor bulk traps.