Application of low-noise TIA ICs for novel sensing of MOSFET noise up to the GHz region

We have realized the characterization of MOSFET noise up to 3 GHz by locating a low-noise (LN) transimpedance amplifier (TIA) close to the devices to be tested (DUTs). A noise floor as low as 3 pA/√Hz was achieved by using an external high-voltage input. Moreover, a high-frequency noise probe equipped with a TIA IC was fabricated, with which measurements in a frequency range up to 800 MHz were achieved for on-wafer MOSFETs with conventional test structures.