Analog dynamic random-access memory (ADRAM) unit cell implemented using a CCD with feedback

A novel unit cell for analog, dynamic, random-access memory is described. The unit cell is implemented using a charge-coupled device (CCD) and features voltage-in/voltage-out operation with low power. The unit cell is essentially an algorithmic voltage sample-and-hold (S/H) circuit. It is sufficiently compact for imager frame memory application and may also find application in analog neural network circuits.<
>