Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates

This paper presents dc and RF characterization as well as modeling of vertical InAs nanowire (NW) MOSFETs with L
_G
=200 nm and Al
₂
O
₃
/HfO
₂
high-κ dielectric. Measurements at V
_DS
=0.5 V show that high transconductance (g
_m
=1.37 mS/μm), high drive current (I
_DS
=1.34 mA/μm), and low ON-resistance (R
_ON
=287 Ωμm) can be realized using vertical InAs NWs on Si substrates. By measuring the 1/f-noise, the gate area normalized gate voltage noise spectral density, S
_VG
·L
_G
·W
_G
, is determined to be lowered by one order of magnitude compared with similar devices with a high-κ film consisting of HfO
₂
only. In addition, with a virtual source model we are able to determine the intrinsic transport properties. These devices (L
_G
=200 nm) show a high injection velocity (v
_inj
=1.7×10
⁷
cm/s) with a performance degradation for array FETs predominantly due to an increase in series resistance.