Investigations on the gate oxide dependence of AC RTN characteristics in nanoscaled MOSFETs: SiON vs. HfO2

Recent experimental results showed frequency dependence of AC RTN statistics, which cannot be explained by basic nonradiative multiphonon (NMP) model. Therefore, we proposed an improved model to explain this AC effect. Since SiON and HfO
2
have different material properties, we believe different gate oxide will influence AC RTN statistics as well. In this paper, we utilize the proposed model on different material and investigated the influence of various parameters on frequency dependence, including material property, gate voltage, and temperature. The results provide support for the improved NMP model and are beneficial for understanding AC RTN in nannoscaled devices as well as future circuit design against RTN.