Study of ambient effect in active SiOx-based resistive switching memory

The active element of unipolar SiO
x
-based resistive switching (RS) memory has been investigated. Testing over a range of temperatures and in different ambients provide information regarding filament growth characteristics and a possible packaging solution. Plausible SiO
x
-based RS mechanisms are modeled and proposed based on trap transformation between H-bridge and H-doublet O
x
ygen vacancy defects. Excellent reliability in multilevel operation and pulse response in the 50ns regime demonstrates good potential for high-density, high-speed SiO
x
-based RS memory.