MOVPE Growth of Thick Single Crystal CdZnTe Epitaxial Layers on Si Substrates for Nuclear Radiation Detector Development

Details about the MOVPE growth of thick single crystal CdZnTe layers on (211)Si substrates are presented. The growth was carried out at a substrate temperature of 650°C, using dimethylcadmium, dimethylzinc, and diethyltellurium precursors. Control of Zn-concentration in the range from 0 to 0.2 was performed by controlling the precursors' flow-rates and ratio. Results from the XRD showed grown layers were single crystalline with no phase separation observed. The 4.2 K PL results show high intensity bound-exciton peaks which shifted to higher energies with increasing Zn-concentrations. A p-CdZnTe/p-CdTe/n-CdTe/n
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-Si hetero-junction diode was fabricated and evaluated for its possible application in nuclear radiation detector development, which exhibited good rectification property.